SUD09P10-195 p-channel 100 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? power switch ? dc/dc converters product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 100 0.195 at v gs = - 10 v - 8.8 11.7 0.210 at v gs = - 4.5 v - 8.5 to-252 s gd top view drain connected to tab ordering information: SUD09P10-195-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 8.8 a t c = 70 c - 7.1 pulsed drain current i dm - 15 avalanche current i as - 18 single avalanche energy a l = 0.1 mh e as 16.2 mj maximum power dissipation a t c = 25 c p d 32.1 b w t a = 25 c c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 50 c/w junction-to-case (drain) r thjc 3.9 www.freescale.net.cn 1 / 6 vishay siliconix SUD09P10-195 document number: 65903 s10-0634-rev. a, 22-mar-10 www.vishay.com 1 p-channel 100 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power switch ? dc/dc converters product summary v ds (v) r ds(on) ( : )i d (a) q g (typ.) - 100 0.195 at v gs = - 10 v - 8.8 11.7 0.210 at v gs = - 4.5 v - 8.5 to-252 s gd top view drain connected to tab ordering information: SUD09P10-195-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet notes: a. duty cycle d 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 8.8 a t c = 70 c - 7.1 pulsed drain current i dm - 15 avalanche current i as - 18 single avalanche energy a l = 0.1 mh e as 16.2 mj maximum power dissipation a t c = 25 c p d 32.1 b w t a = 25 c c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 50 c/w junction-to-case (drain) r thjc 3.9
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 100 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - 1 a v ds = - 100 v, v gs = 0 v, t j = 125 c - 50 v ds = - 100 v, v gs = 0 v, t j = 150 c - 250 on-state drain current a i d(on) v ds - 10 v, v gs = - 10 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 3.6 a 0.162 0.195 v gs = - 4.5 v, i d = - 3.4 a 0.175 0.210 forward transconductance a g fs v ds = - 15 v, i d = - 3.6 a 12 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 50 v, f = 1 mhz 1055 pf output capacitance c oss 65 reverse transfer capacitance c rss 41 total gate charge c q g v ds = - 50 v, v gs = - 10 v, i d = - 3.6 a 23.2 34.8 nc v ds = - 50 v, v gs = - 4.5 v, i d = - 3.6 a 11.7 17.6 gate-source charge c q gs 3.5 gate-drain charge c q gd 4.8 gate resistance r g f = 1 mhz 1.2 5.7 11.5 tu r n - o n d e l ay t i m e c t d(on) v dd = - 50 v, r l = 17.2 i d ? - 2.9 a, v gen = - 10 v, r g = 1 714 ns rise time c t r 12 18 turn-off delay time c t d(off) 33 50 fall time c t f 918 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s - 8.8 a pulsed current i sm - 15 forward voltage a v sd i f = - 2.9 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 2.9 a, di/dt = 100 a/s 50 75 ns peak reverse recovery current i rm(rec) - 4 - 6 a reverse recovery charge q rr 98 147 nc www.freescale.net.cn 2 / 6 SUD09P10-195 p-channel 100 v (d-s) mosfet www.vishay.com 2 document number: 65903 s10-0634-rev. a, 22-mar-10 vishay siliconix SUD09P10-195 notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 100 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - 1 a v ds = - 100 v, v gs = 0 v, t j = 125 c - 50 v ds = - 100 v, v gs = 0 v, t j = 150 c - 250 on-state drain current a i d(on) v ds d - 10 v, v gs = - 10 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 3.6 a 0.162 0.195 : v gs = - 4.5 v, i d = - 3.4 a 0.175 0.210 forward transconductance a g fs v ds = - 15 v, i d = - 3.6 a 12 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 50 v, f = 1 mhz 1055 pf output capacitance c oss 65 reverse transfer capacitance c rss 41 total gate charge c q g v ds = - 50 v, v gs = - 10 v, i d = - 3.6 a 23.2 34.8 nc v ds = - 50 v, v gs = - 4.5 v, i d = - 3.6 a 11.7 17.6 gate-source charge c q gs 3.5 gate-drain charge c q gd 4.8 gate resistance r g f = 1 mhz 1.2 5.7 11.5 : tu r n - o n d e l ay t i m e c t d(on) v dd = - 50 v, r l = 17.2 : i d # - 2.9 a, v gen = - 10 v, r g = 1 : 714 ns rise time c t r 12 18 turn-off delay time c t d(off) 33 50 fall time c t f 918 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s - 8.8 a pulsed current i sm - 15 forward voltage a v sd i f = - 2.9 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 2.9 a, di/dt = 100 a/s 50 75 ns peak reverse recovery current i rm(rec) - 4 - 6 a reverse recovery charge q rr 98 147 nc
typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics transconductance 0 3 6 9 12 15 01234 v gs =10vthru5v v gs =4v v ds - drain-to-source voltage (v) - drain current (a) i d v gs =3v 0.0 0.4 0.8 1.2 1.6 2.0 01234 t c = 25 c t c =125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 5 10 15 20 25 0 3 6 9 12 15 i d - drain current (a) - transconductance (s) g fs t c = 125 c t c = - 55 c t c = 25 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 v gs =4.5v v gs =10v - on-resistance ( ) r ds(on) i d - drain current (a) 0.00 0.15 0.30 0.45 0.60 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0 5 10 15 20 25 v ds =80v i d =3.6a v ds =50v v ds =25v - gate-to-source voltage (v) q g - total gate charge (nc) v gs www.freescale.net.cn 3 / 6 SUD09P10-195 p-channel 100 v (d-s) mosfet vishay siliconix SUD09P10-195 document number: 65903 s10-0634-rev. a, 22-mar-10 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics transconductance 0 3 6 9 12 15 01234 v gs =10vthru5v v gs =4v v ds - drain-to-source voltage (v) - drain current (a) i d v gs =3v 0.0 0.4 0.8 1.2 1.6 2.0 01234 t c = 25 c t c =125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 5 10 15 20 25 0 3 6 9 12 15 i d - drain current (a) - transconductance (s) g fs t c = 125 c t c = - 55 c t c = 25 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 v gs =4.5v v gs =10v - on-resistance ( ) r ds(on) i d - drain current (a) 0.00 0.15 0.30 0.45 0.60 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 2 4 6 8 10 0 5 10 15 20 25 v ds =80v i d =3.6a v ds =50v v ds =25v - gate-to-source voltage (v) q g - total gate charge (nc) v gs
typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s c rss 0 400 800 1200 1600 0 20406080100 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 i d =3.6a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-source voltage (v) t j - junction temperature (c) 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) www.freescale.net.cn 4 / 6 SUD09P10-195 p-channel 100 v (d-s) mosfet www.vishay.com 4 document number: 65903 s10-0634-rev. a, 22-mar-10 vishay siliconix SUD09P10-195 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s c rss 0 400 800 1200 1600 0 20406080100 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.5 0.9 1.3 1.7 2.1 - 50 - 25 0 25 50 75 100 125 150 i d =3.6a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating - 2.3 - 2.0 - 1.7 - 1.4 - 1.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) - 130 - 124 - 118 - 112 - 106 - 100 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-source voltage (v) t j - junction temperature (c) 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a)
typical characteristics 25 c, unless otherwise noted single pulse avalanche current capability vs. time 1 10 100 time (s) i dav (a) t j = 150 c t j = 25 c 10 -3 10 -2 10 -1 10 -4 10 -6 10 -5 safe operating area 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 100 ms limited by r ds(on) * bvdss limited 1ms 100 s 10 ms 1s,10s,dc v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02 www.freescale.net.cn 5 / 6 SUD09P10-195 p-channel 100 v (d-s) mosfet vishay siliconix SUD09P10-195 document number: 65903 s10-0634-rev. a, 22-mar-10 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65903 . single pulse avalanche current capability vs. time 1 10 100 time (s) i dav (a) t j = 150 c t j = 25 c 10 -3 10 -2 10 -1 10 -4 10 -6 10 -5 safe operating area 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 100 ms limited by r ds(on) * bvdss limited 1ms 100 s 10 ms 1s,10s,dc v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
www.freescale.net.cn disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some freestyle documentation may still make reference to rohs directive 2002/95/ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. 6 / 6 SUD09P10-195 p-channel 100 v (d-s) mosfet document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
